Section 12

FET transistors

I_D=\frac{1}{2}k_n(V_{GS}-V_{\mathrm{th}})^2

Computes MOSFET saturation current from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

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MOSFET overdrive voltage

V_{\mathrm{ov}}=V_{GS}-V_{\mathrm{th}}

Overdrive Vov=VGS−Vth is how far VGS exceeds threshold Vth; it is not Vth itself.

Enhancement NMOS unless JFET; bias in the cited region.

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MOSFET triode-region current

I_D=k_n\left[(V_{GS}-V_{\mathrm{th}})V_{DS}-\frac{V_{DS}^2}{2}\right]

Computes MOSFET triode-region current from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

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MOSFET saturation condition

V_{DS}\ge V_{GS}-V_{\mathrm{th}}

Calcula condición de saturación MOSFET a partir del modelo del circuito y de las condiciones indicadas.

Enhancement NMOS unless JFET; bias in the cited region.

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MOSFET cutoff condition

V_{GS}<V_{\mathrm{th}}

Computes MOSFET cutoff condition from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

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On-resistance

R_{\mathrm{DS(on)}}=\frac{V_{DS}}{I_D}

Computes On-resistance from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

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MOSFET as a switch

P_{\mathrm{cond}}=I_D^2R_{\mathrm{DS(on)}}

Computes MOSFET as a switch from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

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MOSFET transconductance

g_m=k_n(V_{GS}-V_{\mathrm{th}})

Computes MOSFET transconductance from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

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JFET saturation current

I_D=I_{\mathrm{DSS}}\left(1-\frac{V_{GS}}{V_P}\right)^2

Computes JFET saturation current from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

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MOSFET biasing

V_{GS}=V_G-I_DR_S

Computes MOSFET biasing from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

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Section 12

FET transistors

MOSFET saturation current

I_D=\frac{1}{2}k_n(V_{GS}-V_{\mathrm{th}})^2

Computes MOSFET saturation current from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

View detail →

MOSFET overdrive voltage

V_{\mathrm{ov}}=V_{GS}-V_{\mathrm{th}}

Overdrive Vov=VGS−Vth is how far VGS exceeds threshold Vth; it is not Vth itself.

Enhancement NMOS unless JFET; bias in the cited region.

View detail →

MOSFET triode-region current

I_D=k_n\left[(V_{GS}-V_{\mathrm{th}})V_{DS}-\frac{V_{DS}^2}{2}\right]

Computes MOSFET triode-region current from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

View detail →

MOSFET saturation condition

V_{DS}\ge V_{GS}-V_{\mathrm{th}}

Calcula condición de saturación MOSFET a partir del modelo del circuito y de las condiciones indicadas.

Enhancement NMOS unless JFET; bias in the cited region.

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MOSFET cutoff condition

V_{GS}<V_{\mathrm{th}}

Computes MOSFET cutoff condition from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

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On-resistance

R_{\mathrm{DS(on)}}=\frac{V_{DS}}{I_D}

Computes On-resistance from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

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MOSFET as a switch

P_{\mathrm{cond}}=I_D^2R_{\mathrm{DS(on)}}

Computes MOSFET as a switch from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

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MOSFET transconductance

g_m=k_n(V_{GS}-V_{\mathrm{th}})

Computes MOSFET transconductance from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

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JFET saturation current

I_D=I_{\mathrm{DSS}}\left(1-\frac{V_{GS}}{V_P}\right)^2

Computes JFET saturation current from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

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MOSFET biasing

V_{GS}=V_G-I_DR_S

Computes MOSFET biasing from the circuit model and the stated conditions.

Enhancement NMOS unless JFET; bias in the cited region.

View detail →