MOSFET saturation condition

Tags

• Electronics
• FET transistors
• physics
• Electronics formula
• physics formula
• Transistors

Detail

Variables

• $I_D,I_{DSS}$A
• $V_{GS},V_{th},V_{DS}$V
• $k_n$A/V²
• $R_{DS(\mathrm{on})}$Ω
• $g_m$S.

Conditions

• Enhancement NMOS unless JFET; bias in the cited region.

Conventions

• A, V, S or Ω

Related formulas

• Related

  MOSFET triode-region current

  $$I_D=k_n\left[(V_{GS}-V_{\mathrm{th}})V_{DS}-\frac{V_{DS}^2}{2}\right]$$
  Open formulaOpen in section

• Related

  MOSFET cutoff condition

  $$V_{GS}<V_{\mathrm{th}}$$
  Open formulaOpen in section

• Related

  Shockley equation

  $$I_D=I_S\left(e^{v_D/(nV_T)}-1\right)$$
  Open formulaOpen in section

• Related

  Thévenin voltage

  $$V_{\mathrm{Th}}=V_{\mathrm{oc}}$$
  Open formulaOpen in section